BCV61
1 Jul-10-2001
NPN Silicon Double Transistor
G01 To be used as a current mirror
G01 Good thermal coupling and V
BE
matching
G01 High current gain
G01 Low collector-emitter saturation voltage
VPS05178
2
1
3
4
EHA00012
C2 (1)
Tr.2Tr.1
C1 (2)
E1 (3) E2 (4)
Type Marking Pin Configuration Package
BCV61A
BCV61B
BCV61C
1Js
1Ks
1Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter ValueSymbol Unit
V
CEO
30 VCollector-emitter voltage
(transistor T1)
V
CBO
30Collector-base voltage (open emitter)
(transistor T1)
6
V
EBS
Emitter-base voltage
DC collector current mA100
I
C
Peak collector current
I
CM
200
Base peak current (transistor T1)
I
BM
200
Total power dissipation, T
S
= 99 °C
300 mW
P
tot
Junction temperature °C150
T
j
-65 ... 150
T
stg
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01170 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance