MAXIMUM RATINGS (T
A
=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
10
V
Collector Current I
C
500
mA
Peak Collector Current I
CM
800 mA
Base Current I
B
100 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
V
CB
=30V 100 nA
I
EBO
V
BE
=10V 100 nA
BV
CEO
I
C
=10mA 60 V
BV
CBO
I
C
=10µA 80 V
BV
EBO
I
E
=100nA 10 V
V
CE(SAT)
I
C
=100mA, I
B
= 0.1mA 1.0 V
V
BE(SAT)
I
C
=100mA, I
B
= 0.1mA 1.5 V
h
FE
V
CE
=5.0V, I
C
= 1.0mA 2,000
h
FE
V
CE
=5.0V, I
C
= 10mA 4,000
h
FE
V
CE
=5.0V, I
C
= 100mA 10,000
f
T
V
CE
=5.0V, I
C
= 30mA, f=100MHz 220 MHz
BCV47
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 ( 07-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 type is
a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.