BCV29
器件描述:NPN SILICON PLANAR DARLINGTON TRANSISTOR
文件大小:16.49KB,共1页
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器件资料摘要:
SOT
89 NPN S
ILIC
O
N
P
L
A
N
A
R
DARLINGTON T
R
A
N
S
I
STO
R
I
SSUE 4
–
J
A
NU
ARY
199
6
CO
M
PLEM
ENTA
RY
TYPE –
BCV2
8
P
ARTM
ARKIN
G DETAI
L
–
E
F
A
B
S
OL
UTE
M
A
XIM
UM
R
ATIN
GS.
P
A
RA
METE
R
SYMBO
L
V
A
L
U
E
U
N
I
T
C
o
lle
ct
or
-
B
ase
Vo
lt
a
g
e
V
CB
O
40
V
C
o
lle
ctor
-Emitte
r
V
o
lta
g
e
V
CE
O
30
V
E
m
itter
-
Base
Voltage
V
EB
O
10
V
P
e
ak
P
u
ls
e
C
u
rr
en
t
I
CM
80
0
m
A
C
ontin
uo
us Co
lle
ct
o
r
Cur
r
e
n
t
I
C
50
0
m
A
P
o
wer Di
ssi
p
a
ti
o
n
at T
am
b
=2
5°C
P
to
t
1W
Op
era
ti
n
g
an
d
Sto
rag
e T
e
m
p
era
tu
r
e
Ra
ng
e
T
j
:T
stg
-
6
5
to +1
5
0
°
C
E
L
ECTR
ICA
L CH
ARA
CTERI
STIC
S
(
a
t
T
am
b
=
25
°
C
unless othe
rwise
sta
t
e
d
)
.
P
A
RA
METE
R
SYMBO
L
M
IN.
T
Y
P.
MA
X
.
UN
IT
CON
D
ITIO
NS
.
C
o
lle
ct
or
-
B
ase
B
r
ea
kd
own
Vo
lta
g
e
V
(B
R)CB
O
40
V
I
C
=10
0
µ
A
C
o
lle
ctor
-Emitte
r
B
r
ea
kd
own
Vo
lta
g
e
V
(B
R)CE
O
30
V
I
C
=10
m
A
*
E
m
itter
-
Base
B
r
ea
kd
own
Vo
lta
g
e
V
(B
R)E
B
O
10
V
I
E
=1
0
µ
A
C
o
l
l
e
ctor Cut-O
ff
C
u
rr
en
t
I
CB
O
100 10
nA µ
A
V
CB
=30V
V
CB
=30V,
T
am
b
=15
0
°C
E
m
i
tter
Cu
t-O
ff Curre
n
t
I
EB
O
100
n
A
V
EB
=4
V
C
o
lle
ctor
-Emitte
r
S
a
tu
rati
o
n
Vo
l
t
ag
e
V
CE
(sa
t
)
1V
I
C
=10
0
m
A
,
I
B
-0
.
1
mA*
B
a
se-Emi
tter
S
a
tu
rati
o
n
Vo
l
t
ag
e
V
BE
(sa
t
)
1.
5
V
I
C
=10
0
m
A
,
I
B
=0
.
1
m
A
*
S
t
ati
c
Fo
rwar
d
Cu
rre
n
t
T
r
an
sfer Rat
i
o
h
FE
4
000
1
000
0
2
000
0
4
000
I
C
=10
0
µ
A,
V
CE
=1
V
†
I
C
=10
m
A
,
V
CE
=5
V
*
I
C
=10
0
m
A
,
V
CE
=5V
*
I
C
=50
0
m
A
,
V
CE
=5V
*
T
r
a
n
si
tion F
r
e
que
ncy
f
T
150
M
H
z
I
C
=50
m
A
,
V
CE
=5
V
f =
2
0
MHz
O
u
tp
ut Ca
pa
cita
nce
C
ob
o
3.
5
p
F
V
CB
=10V,
f=1
M
H
z
*
M
e
asur
ed un
de
r pulse
d
c
o
nditions. Pulse width=3
0
0
µ
s. Duty
cy
cle
≤
2%
F
or
t
ypica
l
g
r
aphs
se
e
F
MMT38
A
dat
ashe
e
t
†
P
e
r
i
o
dic
Sa
mple
Te
st
On
ly
.
S
p
ic
e par
ame
t
e
r da
ta is
av
aila
b
l
e
u
p
on r
equest
for t
h
is
d
e
vic
e
BC
V29
C
C
B
E
SOT89
3 -
2
4