BCV28, BCV48
1 Jul-12-2001
PNP Silicon Darlington Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Complementary types: BCV29, BCV49 (NPN)
2
1
3
VPS05162
2
Type Marking Pin Configuration Package
BCV28
BCV48
ED
EE
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT89
SOT89
Maximum Ratings
Parameter Symbol
BCV28 BCV48
Unit
Collector-emitter voltage
V
CEO
30 60 V
Collector-base voltage
V
CBO
40 80
Emitter-base voltage
V
EBO
10 10
DC collector current
I
C
500 mA
Peak collector current
I
CM
800
Base current 100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 130 °C P
tot
1 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0120 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance