BCV27
C
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
BCV27
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BCV27
PD Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
Mark: FF
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation