1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 :s, duty cycle # 2% – Gemessen mit Impulsen t
p
= 300 :s, Schaltverhältnis # 2%
6
2.
5
ma
x
1.
3

±0
.
1
1.1
2.9
±0.1
0.4
1 2
3
Type
Code
1.9
BCV26, BCV46 Darlington Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25/C) Grenzwerte (T
A
= 25/C)
BCV26 BCV46
Collector-Emitter-voltage V
BE
= 0 - V
CES
30 V 60 V
Collector-Base-voltage E open - V
CB0
40 V 80 V
Emitter-Base-voltage C open - V
EB0
10 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (dc) - I
C
500 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
800 mA
Base current – Basisstrom (dc) - I
B
100 mA
Junction temperature – Sperrschichttemperatur T
j
150/C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150/C
Characteristics (T
j
= 25/C) Kennwerte (T
j
= 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 60 V
BCV26
BCV46
- I
CB0
- I
CB0
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 10 V - I
EB0
– – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg.
2
)
- I
C
= 100 mA, - I
B
= 0.1 mA - V
CEsat
– – 1 V