BCV26, BCV46
1 Jul-13-2001
PNP Silicon Darlington Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Complementary types: BCV27, BCV47 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCV26
BCV46
FDs
FEs
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BCV26 BCV46
Unit
Collector-emitter voltage
V
CEO
30 60 V
Collector-base voltage
V
CBO
40 80
Emitter-base voltage
V
EBO
10 10
DC collector current
I
C
500 mA
Peak collector current
I
CM
800
Base current 100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 74 °C P
tot
360 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01210 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance