BCV26
PNP Darlington Transistor
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
BCV26
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BCV26
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
C
B
E
SOT-23
Mark: FD
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation