©

2001
PNP SILICON EPITAXIAL TRANSISTOR
2SB1571
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15930EJ2V0DS00 (2nd edition)
Date Published December 2001 NS CP(K)
Printed in Japan
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FEATURES
• Low VCE(sat): VCE(sat)1 ≤ −0.35 V
• Complementary to 2SD2402
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −50 V
Collector to Emitter Voltage VCEO −30 V
Emitter to Base Voltage VEBO −6.0 V
Collector Current (DC) IC(DC) −5.0 A
Collector Current (pulse)
Note1
IC(pulse) −8.0 A
Base Current (DC) IB(DC) −0.2 A
Base Current (pulse)
Note1
IB(pulse) −0.4 A
Total Power Dissipation
Note2
PT 2.0 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 16 cm
2
x 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = −50 V, IE = 0 −100 nA
Emitter Cut-off Current IEBO VEB = −6.0 V, IC = 0 −100 nA
DC Current Gain
Note
hFE1 VCE = −1.0 V, IC = −1.0 A 80 −
hFE2 VCE = −1.0 V, IC = −2.0 A 100 200 400 −
Base to Emitter Voltage
Note
VBE VCE = −1.0 V, IC = −0.1 A −0.6 −0.665 −0.7 V
Collector Saturation Voltage
Note
VCE(sat)1 IC = −3.0 A, IB = −0.15 A −0.17 −0.35 V
Collector Saturation Voltage
Note
VCE(sat)2 IC = −5.0 A, IB = −0.25 A −0.28 −0.55 V
Base Saturation Voltage
Note
VBE(sat) IC = −3.0 A, IB = −0.15 A −0.89 −1.2 V
Gain Bandwidth Product fT VCE = −10 V, IE = 0.5 A 150 MHz
Output Capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 100 pF
Turn-on Time ton IC = −2.0 A, VCC = −10 V, 265 ns
Storage Time tstg RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, 350 ns
Fall Time tf 50 ns
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking HX HY HZ
hFE2 100 to 200 160 to 320 200 to 400
PACKAGE DRAWING (Unit: mm)
1.6±0.2
4.5±0.1
0.42
±0.06
0.8 MIN.
1.5
0.42
±0.06
0.47
±0.06
3.0
2.5±0.1
4.0±0.25
0.41
+0.03
–0.05
1.5±0.1
E
C
B
E: Emitter
C: Collector (Fin)
B: Base