2SA821S
Transistors
Rev.A 1/2
High-voltage Amplifier Transistor (−210V, −30mA)
2SA821S


zFeatures
1) High breakdown voltage, (VCER = −210V )
2) Complements the 2SC1651S.










zExternal dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1)Emitter
(2)Collector
(3)Base


zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
−210
−210
−5
−30
250
150
−55 to +150
Unit
V
V ∗
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ RBE=10kΩ



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
−210
−210
−5
−
−
−
−
−
−
−
−
−
−
−
50
8
−
−
−
−
−1
−1
270
−
V
V
V
µA
µA
V
MHz
pF
IC= −50µA
IC= −100µA, RBE=10kΩ
IE= −50µA
VCB= −150V
VEB= −4.5V
IC/IB= −2mA/−0.2mA
hFE 82 −−1 − VCE= −3V, IC= −5A
VCE= −5V , IE=2mA , f=30MHz
VCE= −10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current transfer ratio



zPackaging specifications and hFE
Type 2SA821S
SPT
PQ
5000
Package
hFE
TPCode
Basic ordering unit (pieces)