UTC 2SA684 PNP EPITAXIAL PLANAR TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1

QW-R202-002,A

PNP EPITAXIAL PLANAR
TRANSISTOR

DESCRIPTION
The UTC 2SA684 is power amplifier and driver.

FEATURES
*Automatic insertion by radial taping possible.
*Complementary pair with 2SC1384

TO-92L
1

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Peak Collector Current Icp 1.5 A
Collector Current(DC) Ic 1 A
Collector Dissipation( Ta=25°C) Pc 1 W
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=20V,IE=0 0.1 µA
Collector-Base Voltage VCBO Ic=10µA,IE=0 60 V
Collector-Emitter Voltage VCEO Ic=2mA,IB=0 50 V
Emitter-Base Voltage VEBO IE=10µA,Ic=0 5 V
DC Current Gain hFE1
hFE2
VCE=10V,Ic=500mA
VCE=5V,IB=1A
85
50


340


Collector-Emitter Saturation Voltage VCE(sat) Ic=0.5A,IB=50mA 0.2 0.4 V
Base-Emitter Saturation Voltage VBE(sat) Ic=0.5A,IB=50mA 0.85 1.2 V
Current Gain Bandwidth Product fT VCE=10V,IB=50mA,f=200MHz 200 MHz
Output Capacitance Cob VCB=10V,IE=0,f=1MHz 20 30 pF