Semiconductor Group 1 Nov-27-1996
BCR 583
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
=10kΩ,R
2
=10kΩ)
Type Marking Ordering Code Pin Configuration Package
BCR 583 XMs Q62702-C2385 1=B 2=E 3=C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
10
Input on Voltage V
i(on)
50
DC collector current I
C
500 mA
Total power dissipation, T
S
= 79 °C P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 325 K/W
Junction - soldering point R
thJS
≤ 215
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu