BCR512
Dec-13-20011
NPN Silicon Digital Transistor

G01 Switching circuit, inverter, interface circuit,
driver circuit
G01 Built in bias resistor (R
1
=4.7kG02, R
2
=4.7kG02)
1
2
3
VPS05161
EHA07184
3
21
C
EB
R
1
R
2
Type Marking Pin Configuration Package
BCR512 XFs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
V50
50
V
CBO
Collector-base voltage
Emitter-base voltage 10
V
EBO
Input on Voltage
V
i(on)
30
500 mA
I
C
DC collector current
Total power dissipation, T
S
= 79 °C P
tot
mW330
Junction temperature
T
j
150 °C
-65 ... 150Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance