BCR400W
Aug-07-20011
Active Bias Controller

Characteristics
G01 Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
G01 Low voltage drop of 0.7V
Application notes
G01 Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
G01 Ideal supplement for Sieget and other transistors
G01 also usable as current source up to 5mA
VPS05605
4
2
1
3
EHA07188
4 3
21
Type Marking Pin Configuration Package
BCR400W W4s
1=GND/E
NPN
2=Contr/B
NPN
3V
S
4=Rext/C
NPN
SOT343
(E
NPN
, B
NPN
, C
NPN
are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter Symbol Value Unit
Source voltage V
S
18 V
Control current I
Contr.
10 mA
Control voltage V
Contr.
16 V
Reverse voltage between all terminals V
R
0.5
Total power dissipation, T
S
= 117 °C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 100 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance