2N3738
器件描述:POWER TRANSISTORS NPN SILICON
文件大小:17.07KB,共2页
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器件资料摘要:
Document Number 6051
Issue 1
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2N3738
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
D
Total Device Dissipation at T
case
= 25°C
Derate 25°C
T
stg
Operating and Storage Temperature Range
250V
225V
6V
1A
2A
0.5A
20W
0.133W/°C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm
24.13 (0.95) 24.63 (0.97)
14.48 (0.570) 14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028) 0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470) 12.70 (0.500)
1 2
POWER TRANSISTORS
NPN SILICON
TO66 Package (TO-213AA)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
• Hermetically Packaged.
Low Saturation Voltage
High Gain
Pin 1 = Base Pin 2 = Emitter Case = Collector