Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................ 3A
•VDRM ..............................................................400V/600V
•IFGT !, IRGT !, IRGT #......................... 15mA (10mA)
] 2
BCR3AS
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
] 1. Gate open.
6.5
5.0±0.2
2.3 2.3
0.9 MAX
1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
2
23
4
1
3
4
1
1CR
2CR
3CR
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3