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BCR3AM

器件描述:LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
器件厂商:MITSUBISHI [Mitsubishi Electric Semiconductor]
文件大小:98.45KB,共5页
Sponsor by e络盟
器件资料摘要:
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control, other general
purpose control applications
•IT (RMS) ........................................................................ 3A
•VDRM ..............................................................400V/600V
•IFGT !, IRGT !, IRGT #......................... 30mA (15mA)
] 6
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg

Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=86°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
1.6
] 1. Gate open.
TYPE NAME
VOLTAGE
CLASS
231
3.2±0.2
φ3.2±0.1
10 MAX
4
23.7±0.5
8 MAX
1.2±0.1
4 MAX
12 MIN
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4.5 MAX
1.55±0.1
0.5
0.5


Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-202
24
1
3
1CR
2CR
3CR
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL