Aug-29-2003
1
BCR199...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
= 47kΩ)
BCR199F/L3
BCR199T
EHA07180
3
12
BE
C
1
R
Type Marking Pin Configuration Package
BCR199F*
BCR199L3*
BCR199T*
UBs
UB
UBs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
* Preliminary
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on voltage V
i(on)
50
Collector current I
C
70 mA
Total power dissipation-
BCR199F, T
S
≤ 128°C
BCR199L3, T
S
≤ 135°C
BCR199T, T
S
≤ 109°C
P
tot

250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150