BCR191S
Dec-13-20011
PNP Silicon Digital Transistor Array

G01 Switching circuit, inverter, interface circuit,
driver circuit
G01 Two ( galvanic) internal isolated Transistors
with good matching in one package
G01 Built in bias resistor (R
1
=22kG02, R
2
=22kG02)
VPS05604
6
3
1
5
4
2
EHA07173
6 54
321
C1 B2 E2
C2B1E1
1
R
R
2
R
1
R
2
TR1
TR2
Type Marking Pin Configuration Package
BCR191S WOs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage 50 V
V
CEO
50Collector-base voltage
V
CBO
10
V
EBO
Emitter-base voltage
Input on Voltage
V
i(on)
30
100 mADC collector current
I
C
mW
P
tot
250
Total power dissipation, T
S
= 115 °C
Junction temperature 150 °C
T
j
-65 ... 150Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 140 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance