Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Conditions Unit
A
A
A
2
s
W
W
V
A
°C
Ratings
16
170
121
5
0.5
10
2
–20 ~ +125
] 1. Gate open.
Commercial frequency, sine full
wave, 360° conduction
BCR16A, B, C
BCR16E
Tc=99°C
Tb=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
•IT (RMS) ...................................................................... 16A
•VDRM ..............................................................400V/500V
•IFGT !, IRGT !, IRGT #...........................................30mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
10
500
700
2
1
3
φ2.0 MIN
1
2
3
3 MAX
φ8.7 MAX
φ2.0 MIN
6.5 MAX
19 MAX
14 MAX
φ11.1 MAX
1CR
2CR
3CR
CR
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR16A