Semiconductor Group 1 Nov-27-1996
BCR 169W
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7kΩ)
Type Marking Ordering Code Pin Configuration Package
BCR 169W WSs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on Voltage V
i(on)
15
DC collector current I
C
100 mA
Total power dissipation, T
S
= 124°C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 240 K/W
Junction - soldering point R
thJS
≤ 105
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu