Semiconductor Group 1 Dec-18-1996
BCR 169S
PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated Transistors
in one package
• Built in bias resistor (R
1
=4.7kΩ)
Type Marking Ordering Code Pin Configuration Package
BCR 169S WSs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on Voltage V
i(on)
15
DC collector current I
C
100 mA
Total power dissipation, T
S
= 115°C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 275 K/W
Junction - soldering point R
thJS
≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu