BCR169U
Dec-13-20011
PNP Silicon Digital Transistor
Preliminary data
G01 Switching circuit, inverter, interface circuit,
driver circuit
G01 Two ( galvanic) internal isolated Transistors
with good matching in one package
G01 Built in bias resistor (R
1
= 4.7kG02)
VPW09197
1
2
3
4
5
6
EHA07174
6 54
321
C1 B2 E2
C2B1E1
1
R
R
2
R
1
R
2
TR1
TR2
Type Marking Pin Configuration Package
BCR169U WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on Voltage V
i(on)
15
DC collector current I
C
100 mA
Total power dissipation, T
S
= 118 °C
P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 130 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance