BCR 135
Semiconductor Group
Jun-18-19971
NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
=10kW , R
2
=47kW )
Type Marking Ordering Code PackagePin Configuration
SOT-23BCR 135 WJs Q62702-C2257 1 = B 2 = E 3 = C
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
V50
50V
CBO
Collector-base voltage
Emitter-base voltage 6V
EBO
Input on Voltage V
i(on)
20
100 mAI
C
DC collector current
Total power dissipation, T
S
= 102 °C P
tot
mW200
Junction temperature T
j
150 °C
65...+150Storage temperature T
stg
Thermal Resistance
Junction ambient
1)
£ 350 K/WR
thJA
Junction - soldering point R
thJS
£ 240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu