Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Solid state relay, hybrid IC
BCR12CS
•IT (RMS) ...................................................................... 12A
•VDRM ..............................................................400V/600V
•IFGT !, IRGT !, IRGT #......................... 30mA (20mA)
] 5
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
] 1. Gate open.
231
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3 –0.5 0
+0.3
–0
(1.5)
1.5 MAX
1.5 MAX
8.6±0.3
9.8±0.5
2.6±0.4
4.5
∗
OUTLINE DRAWING
Dimensions
in mm
TO-220S
24
1
3
1CR
2CR
3CR
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
∗
Measurement
point of case
temperature