©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power
MOSFET

The 2N6790 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly
from an integrated circuit.

Features

• 3.5A, 200V
•r

DS(ON)

= 0.800

Ω

• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

JEDEC TO-205AF

Ordering Information

PART NUMBER PACKAGE BRAND

2N6790 TO-205AF 2N6790
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
(CASE)
GATE

Data Sheet December 2001