Nov-27-2003
1
BCR101...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
= 100kΩ , R
2
= 100kΩ )
BCR101F/L3
BCR101T
EHA07184
3
21
C
EB
R
1
R
2
Type Marking Pin Configuration Package
BCR101F*
BCR101L3*
BCR101T*
UCs
UC
UCs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
*Preliminary
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
10
Input on voltage V
i(on)
50
Collector current I
C
50 mA
Total power dissipation-
BCR101F, T
S
≤ 128°C
BCR101L3, T
S
≤ 135°C
BCR101T, T
S
≤ 109°C
P
tot

250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150