Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ..................................................................... 0.8A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT #..............................................5mA
•IFGT #.....................................................................10mA
BCR08AS
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C
✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
mg
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
12 (marked “BF”)
600
720
Unit
V
V
MAXIMUM RATINGS
✽1. Gate open.
2
1
3
1
2
3
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
4.4±0.1
1.5±0.1
1.6±0.2
0.4±0.07
0.8 MIN
2.5±0.1 3.9±0.3
0.4
+0.03
–0.05
1 2 3
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5±0.07
1.5±0.1 1.5±0.1