©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
BCP68
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 20 V
V
CBO
Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1 A
P
D
Total Device Dissipation
- Derate above 25°C
@ T
A
=25°C1.
12
Watts
mW/°C
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ +150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 100µA, I
E
= 0 25 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 1mA, I
B
= 0 20 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5 V
I
CBO
Collector-Base Cutoff Current V
CB
= 25V, I
E
= 0, T
A
= 25°C
V
CB
= 25V, I
E
= 0, T
A
= 125°C
10
1
µA
mA
I
EBO
Emitter-Base Cutoff Current V
EB
= 5V, I
C
= 0 10 µA
On Characteristics (1)
h
FE
DC Current Gain I
C
= 5mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 1V
I
C
= 1A, V
CE
= 1V
50
85
60
375
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 100mA 0.5 V
V
BE(on)
Base-Emitter On Voltage I
C
= 1A, V
CE
= 1V 1 V
BCP68
NPN General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers.
• Sourced from process 37.
SOT-223
1. Base 2.4. Collector 3. Emitter
1
2
4
3