Semiconductor Group 1
PNP Silicon AF Transistor BCP 69
Maximum Ratings
1 2 3 4
B C E C
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
SOT-223
Parameter Symbol Values Unit
Collector-emitter voltage VCE0
VCES
20
25
V
Peak collector current ICM 2
Base current IB 100 mA
Collector current IC 1A
Junction temperature Tj 150 ˚C
Total power dissipation, TS = 124 ˚C
2)
Ptot 1.5 W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 72 K/W
Emitter-base voltage VEB0 5
Peak base current IBM 200
Junction - soldering point Rth JS ≤ 17
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 For general AF application
a71 High collector current
a71 High current gain
a71 Low collector-emitter saturation voltage
a71 Complementary type: BCP 68 (NPN)
01.97