BCP69
器件描述:PNP Silicon AF Transistor
文件大小:43.8KB,共4页
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器件资料摘要:
BCP69
1 Nov-29-2001
PNP Silicon AF Transistor
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary type: BCP68 (NPN)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BCP69
BCP69-10
BCP69-16
BCP69-25
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO
20 V
Collector-emitter voltage
V
CES
25 V
Collector-base voltage
V
CBO
25 V
Emitter-base voltage
V
EBO
5
DC collector current
I
C
1 A
Peak collector current
I
CM
2
Base current
I
B
100 mA
Peak base current
I
BM
200
Total power dissipation, T
S
= 124 °C P
tot
1.5 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance