SOT223
PNP SILICON PLANAR
MEDIUM POW
E
R TRANSISTOR
ISSUE 3
FEBRUA
RY 19
96
a37
FEAT
URE
S
*
For AF dri
ve
r
s
and
out
put

s
tages
*
H
igh coll
ector
c
urrent and Low V
C
E(sa
t
)
COMPL
E
MENT
A
RY T
Y
PE


B
C
P6
8
P
A
R
T
M
ARKI
NG DE
T
A
IL

B
C
P6
9
BCP6
9 25

ABSO
L
U
TE M
A
XI
M
U
M
RATI
NG
S.
PA
R
A
M
ETER
SY
M
B
O
L
V
A
L
U
E
U
N
I
T
Co
l
l
ec
t
o
r
-
B
a
s
e
Vo
l
t
ag
e
V
CBO
-2
5
V
C
o
lle
c
to
r-
E
m
it
te
r V
o
lta
g
e
V
CEO
-2
0
V
E
m
itte
r
-
B
a
s
e
V
o
lt
a
g
e
V
EBO
-5
V
Peak
Pu
l
s
e
Cur
r
ent
I
CM
-2
A
Co
n
t
i
n
uo
u
s
Co
l
l
ec
t
o
r
Cu
r
r
e
n
t
I
C
-1
A
Po
w
e
r
D
i
ssi
pat
i
on
at
T
am
b
=2
5

C
P
to
t
2W
O
p
er
a
t
i
n
g and
St
or
age T
e
m
p
er
a
t
ur
e
R
a
nge
T
j
:T
st
g
-
55 t
o
+150

C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
u
n
l
e
ss other
w
i
s
e st
ate
d
)
.
PA
R
A
M
ETER
S
Y
M
BO
L
M
I
N
.
T
YP
.
M
AX.
U
N
I
T
C
O
N
D
I
TI
O
N
S
.
Co
l
l
ec
t
o
r
-
B
a
s
e
Br
eakdow
n V
o
l
t
ag
e

V
(
BR)
CBO
-2
5
V
I
C
=-
10
µ
A
C
o
lle
c
to
r-
E
m
it
te
r
Br
eakdow
n V
o
l
t
ag
e
V
(
BR)
CEO
-2
0
V
I
C
=-
30
m
A
E
m
itte
r
-
B
a
s
e
Br
eakdow
n V
o
l
t
ag
e
V
(
BR)
EBO
-5
V
I
E
=-
1
0
µ
A
C
o
lle
c
to
r C
u
t-
O
ff
Cu
r
r
e
nt
I
CBO
-1
0
0
-1
0
nA µ
A
V
CB
=-
2
5
V
V
CB
=-
2
5
V,
T
am
b
=
1
50
C
E
m
it
t
e
r
C
u
t-
O
f
f
C
u
rren
t
I
EBO
-1
0
µ
A
V
EB
=-
5
V
C
o
lle
c
to
r-
E
m
it
te
r
S
a
t
u
rati
o
n
V
o
l
t
a
g
e
V
CE
(
s
at
)
-0
.5
V
I
C
=-
1A,
I
B
=-
100
m
A
*
B
a
se-
E
m
i
t
t
e
r
Tur
n-
O
n
Vo
l
t
ag
e
V
BE
(
o
n
)
- 0
.
6
-1
.0
V V
I
C
=-
5A,
V
CE
=-
10V*
I
C
=-
1A,
V
CE
=-
1V
*
S
t
a
t
ic
F
o
rw
ard
C
u
rren
t
Tr
ans
f
er
R
a
t
i
o
h
FE
BCP
69
BCP
69
-
2
5
50 63 16
0
250
40
0
40
0
I
C
=-
5m
A,
V
CE
=-
1
0
V*
I
C
=-
50
0m
A,
V
CE
=-
1V
*
I
C
=-
50
0m
A,
V
CE
=-
1V
*
Tr
ansi
t
i
on Fr
equency
f
T
100
M
H
z
I
C
=-
10
0m
A,
V
CE
=-
5V
,
f
=
10
0M
Hz
*M
eas
u
r
ed
un
der pu
l
s
ed
c
o
nd
i
t
i
o
n
s
.
P
u
l
s
e w
i
d
t
h=
300
µ
s.
D
u
ty
cy
c
l
e

≤
2%
Fo
r
t
y
p
i
c
a
l
char
act
e
ri
s
t
i
c
s
g
r
ap
hs s
ee FM
M
T
549 dat
a
s
h
eet
.
BCP69
C
C
E
B
3 - 20