BCP55
器件描述:MEDIUM POWER AMPLIFIER
文件大小:71.84KB,共4页
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器件资料摘要:
BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
a73 SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
a73 MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
a73 GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
a73 PNP COMPLEMENTS ARE BCP52 AND
BCP53 RESPECTIVELY
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP55 BCP56
VCBO Collector-Base Voltage (IE = 0) 60 100 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 V
V
CER
Collector-Emitter Voltage (R
BE
= 1KΩ)61
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 1 A
I
CM
Collector Peak Current (t
p
< 5 ms) 1.5 A
IB Base Current 0.1 A
IBM Base Peak Current (tp < ms) 0.2 A
P
tot
Total Dissipation at T
c
= 25
o
C2W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
2
3
SOT-223
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