BCP55
NPN General Purpose Amplifier
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
BCP55
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 1.5 A
TJ, Tstg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
BCP55
P
D
Total Device Dissipation
Derate above 25°C
1.5
12
W
mW/°C
Rθ
JA
Thermal Resistance, Junction to Ambient 83.3 °C/W
 1997 Fairchild Semiconductor Corporation
B
C
C
SOT-223
E