BCP 54M ... BCP 56M
1 Au -11-1998
Semiconductor Group
NPN Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 51M...BCP 53M(PNP)
VPW05980
1
2
3
5
4
Type Marking Ordering Code PackagePin Configuration
5 = C4 n.c.BAs
BEs
BHs
BCP 54M
BCP 55M
BCP 56M
1 = B 2 = C 3 = E SCT-595Q62702-C2595
Q62702-C2606
Q62702-C2607
Maximum Ratings
Parameter Symbol BCP 54M BCP 55M BCP 56M Unit
Collector-emitter voltage
V
CEO
45 60 80 V
Collector-base voltage
V
CBO
45 60 100
Emitter-base voltage
V
EBO
5 5 5
DC collector current
I
C
1 mA
Peak collector current
I
CM
1.5 A
Base current
I
B
100 mA
Peak base current
I
BM
200
Total power dissipation, T
S
£ 77 °C P
tot
1.7 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65...+150
Thermal Resistance
£ 98
Junction ambient
1)
R
thJA
K/W
Junction - soldering point
R
thJS
£ 43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group 1 1998-11-01