1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0080C0078C0080 C0083C0105C0108C0105C0099C0111C0110
C0069C0112C0105C0116C0097C0120C0105C0097C0108 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
• High Current: 1.5 Amps
• NPN Complement is BCP56
• The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
• Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
–80 Vdc
Collector-Base Voltage V
CBO
–100 Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current I
C
1.5 Adc
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Temperature Range T
J
, T
stg
–65 to 150 °C
DEVICE MARKING
AH
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
θJA
83.3 °C/W
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BCP53T1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
 Motorola, Inc. 1996
C0066C0067C0080C0053C0051C0084C0049
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 1