BCP54
NPN General Purpose Amplifier
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
BCP54
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 45 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 1.5 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
B
C
C
SOT-223
E
Symbol Characteristic Max Units
BCP54
P
D
Total Device Dissipation
Derate above 25°C
1.5
12
W
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 83.3 °C/W
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation