BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
a73 SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
a73 MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
a73 GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
a73 NPN COMPLEMENTS ARE BCP55 AND
BCP56 RESPECTIVELY

INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP52 BCP53
V
CBO
Collector-Base Voltage (I
E
= 0) -60 -100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) -60 -80 V
VCER Collector-Emitter Voltage (RBE = 1KΩ)- 1
EBO
Emitter-Base Voltage (I
C
= 0) -5 V
I
C
Collector Current -1 A
I
CM
Collector Peak Current (t
p
< 5 ms) -1.5 A
I
B
Base Current -0.1 A
I
BM
Base Peak Current (t
p
< ms) -0.2 A
Ptot Total Dissipation at Tc = 25
o
C2W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
2
3
SOT-223
1/4