1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
4 01.11.2003
4
321
3
±0.1
6.5
±0.2
0.7
3.25 2.3
7
±0
.
3
1.65
3.
5
±0
.2
BCP 29, BCP 49 Darlington Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung 1.5 W
Plastic case SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2, 4 = C 3 = E2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BCP 29 BCP 49
Collector-Emitter-voltage B open V
CE0
30 V 60 V
Collector-Base-voltage E open V
CB0
40 V 80 V
Emitter-Base-voltage C open V
EB0
10 V
Power dissipation – Verlustleistung P
tot
1.5 W
1
)
Collector current – Kollektorstrom (DC) I
C
500 mA
Peak Collector current – Kollektor-Spitzenstrom I
CM
800 mA
Base current – Basisstrom (DC) I
B
100 mA
Peak Base current – Basisstrom I
BM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 30 V BCP 29 I
CB0
– – 100 nA
I
E
= 0, V
CB
= 60 V BCP 49 I
CB0
– – 100 nA
I
E
= 0, V
CB
= 30 V, T
A
= 150g47C BCP 29 I
CB0
– – 10 g58A
I
E
= 0, V
CB
= 60 V, T
A
= 150g47C BCP 49 I
CB0
– – 10 g58A
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V I
EB0
– – 100 nA