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BCP29

器件描述:NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:153.14KB,共5页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
NPN Silicon Darlington Transistors BCP 29
BCP 49
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BCP 29
BCP 49
Q62702-C2136
Q62702-C2137
BCP 29
BCP 49
SOT-223
Ordering Code
(tape and reel)
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Parameter Symbol
BCP 29
Unit
Collector-emitter voltage VCE0 30 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0
Collector current IC mA
Base current IB
Total power dissipation, TS = 124 ˚C
2)
Ptot W
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 75 K/W
Peak collector current ICM
Peak base current IBM
BCP 49
60
80
500
100
1.5
150
800
200
Values
10 10
Junction - soldering point Rth JS ≤ 17
a71 For general AF applications
a71 High collector current
a71 High current gain
a71 Complementary types: BCP 28/48 (PNP)
5.91