BCP29, BCP49
1 Nov-29-2001
NPN Silicon Darlington Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Complementary types: BCP28/48 (PNP)
VPS05163
1
2
3
4
EHA00009
B(1)
E(3)
C(2,4)
Type Marking Pin Configuration Package
BCP29
BCP49
BCP 29
BCP 49
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT223
SOT223
Maximum Ratings
Parameter Symbol
BCP29 BCP49
Unit
Collector-emitter voltage
V
CEO
30 60 V
Collector-base voltage
V
CBO
40 80
Emitter-base voltage
V
EBO
10 10
I
C
500DC collector current mA
Peak collector current mA
I
CM
800
Base current 100
I
B
200
I
BM
Peak base current
Total power dissipation, T
S
= 124 °C P
tot
W1.5
150 °CJunction temperature
T
j
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance