2N6295
器件描述:DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
文件大小:15.3KB,共2页
Sponsor by e络盟
器件资料摘要:
80V
80V
5V
4A
8A
80mA
50W
0.286 W/°C
–65 to 200°C
11/99
2N6295
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CEO
Collector – Emitter Voltage
V
CB
Collector – Base Voltage
V
EB
Emitter – Base Voltage
I
C
Collector Current – Continuous
Peak
I
B
Base Current
P
D
Total Power Dissipation at T
case
= 25°C
Derate above 25°C
T
j,
T
stg
, Operating and Storage Junction Temperature Range
24.33 (0.958) 24.43 (0.962)
14.48 (0.570) 14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028) 0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470) 12.70 (0.500)
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTOR
FEATURES
•LOWV
CE(SAT)
HIGH CURRENT
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
APPLICATIONS
GENERAL PURPOSE AMPLIFIER
LOW FREQUENCY SWITCHING
HAMMER DRIVER APPLICATIONS
MECHANICAL DATA
Dimensions in mm(inches)
TO–66
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction to Case 3.5 °C/W