BC 857S
Semiconductor Group
May-12-19981
PNP Silicon AF Transistor Array

• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
Type Marking Ordering Code Pin Configuration Package
BC 857S 3Cs Q62702-C2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter ValueSymbol Unit
VV
CEO
45Collector-emitter voltage
Collector-base voltage V
CBO
50
Collector-emitter voltage 50V
CES
5Emitter-base voltage V
EBO
mAI
C
100DC collector current
Peak collector current I
CM
200
Total power dissipation, T
S
= 115 °C mW250P
tot
150Junction temperature °CT
j
Storage temperature T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
£ 275 K/W
Junction - soldering point R
thJS
£ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu