M35–1/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–50 V
Collector–Base Voltage V
CBO
–60 V
Emitter–Base Voltage V
EBO
–6.0 V
Collector Current — Continuous I
C
–150 mAdc
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ~+150 °C
DEVICE MARKING
BC857BRLT1 =G3F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
– 50 — — V
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
V
(BR)EBO
– 6 — — V
(I
E
= – 50 µA)
Collector–Base Breakdown Voltage
V
(BR)CBO
– 60 — — V
(I
C
= – 50 µA)
Collector Cutoff Current
I
CBO
— — – 0.1 µA
(V
CB
= – 60 V)
Emitter cutoff current
I
EBO
— — – 0.1 µA
(V
EB
= – 6 V)
Collector-emitter saturation voltage
V
CE(sat)
— — -0.5 V
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio h
FE
120 –– 560 ––
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
f
T
— 140 –– MHz
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
C
ob
— 4.0 5.0 pF
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
QRS
hFE 120~270 180~390 270~560
1
3
2
BC857BRLT1
is LRC prefered Device
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
*