Jan-30-2004
1
BC857BL3, BC858BL3
2
3
1
PNP Silicon AF Transistors
Preliminary data
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC847BL3,
BC848BL3 (NPN)
Type Marking Pin Configuration Package
BC857BL3
BC858BL3
3F
3K
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
TSLP-3-1
TSLP-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BC857BL3
BC858BL3
V
CEO

45
30
V
Collector-emitter voltage
BC857BL3
BC858BL3
V
CES

50
30
Collector-base voltage
BC857BL3
BC858BL3
V
CBO

50
30
Emitter-base voltage
BC857BL3
BC858BL3
V
EBO

5
5
Collector current I
C
100 mA
Peak collector current I
CM
200
Total power dissipation
T
S
≤ 138°C
P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
≤ 50
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance