BC857
BC858
SMALL SIGNAL PNP TRANSISTORS
n SILICON EPITAXIALPLANAR PNP
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n VERY LOW NOISE AF AMPLIFIER
n NPN COMPLEMENTS FOR BC857 IS BC847
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type Marking
BC857A 3E
BC857B 3F
BC858A 3J
BC858B 3K
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BC857 BC858
VCES Collector-Emitter Voltage (VBE =0) -50 -30 V
VCBO Collector-Base Voltage (IE =0) -50 -30 V
VCEO Collector-Emitter Voltage (IB =0) -45 -30 V
V
EBO
Emitter-Base Voltage (I
C
=0) -5 V
I
C
Collector Current -0.1 A
ICM Collector Peak Current -0.2 A
IBM Base Peak Current -0.2 A
IEM Emitter Peak Current -0.2 A
P
tot
Total Dissipation at T
c
=25
o
C 300 mW
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/5