BC856U
Nov-29-20011
PNP Silicon AF Transistor Array
G01 For AF input stages and driver applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Two ( galvanic) internal isolated Transistors
with good matching in one package
VPW09197
1
2
3
4
5
6
EHA07175
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
Type Marking Pin Configuration Package
BC856U 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter Symbol Value Unit
V
CEO
65Collector-emitter voltage V
Collector-base voltage 80V
CBO
Collector-emitter voltage V
CES
80
Emitter-base voltage 5V
EBO
DC collector current I
C
100 mA
Peak collector current 200I
CM
250Total power dissipation, T
S
= 118 °C P
tot
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01130 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance