©2004 Fairchild Semiconductor Corporation Rev. A, January 2004
2N52
45
Absolute Maximum Ratings* T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse ≤ 300µs
Thermal Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= 1.0µA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current V
GS
= 25V, V
DS
= 0 -1.0 nA
V
GS(off)
Gate-Source Cutoff Voltage V
DS
= 15V, I
D
= 1.0nA -1.0 -0.6 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, V
GS
= 0 5 15 mA
Small Signal Characteristics
gfs Forward Transferconductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 4500 11000 µmhos
goss Common- Source Output Conductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 50 µmhos
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
2N5245
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
• Sourced from process 90.
TO-92
1. Gate 2. Source 3. Drain
1