1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 :s, duty cycle # 2% – Gemessen mit Impulsen t
p
= 300 :s, Schaltverhältnis # 2%
18
1 2 3
Type
Code
2.
1
±0
.
1
2
±0.1
0.9
±0.1
1.2
5
±0
.
1
465
6.5 6.5
2.4
BC856S ... BC858S General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-04-09
Dimensions / Maße in mm
Power dissipation – Verlustleistung 310 mW
Plastic case SOT-363
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25/C) Grenzwerte (T
A
= 25/C)
BC856S BC857S BC858S
Collector-Emitter-voltage B open - V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open - V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
310 mW
1
)
Collector current – Kollektorstrom (dc) - I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
200 mA
Peak Base current – Basis-Spitzenstrom - I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom I
EM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150/C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150/C
Characteristics (T
j
= 25/C) Kennwerte (T
j
= 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 5 V, - I
C
= 10 :A
- V
CE
= 5 V, - I
C
= 2 mA
h
FE
h
FE
typ. 90 ... 270
110 ... 800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220 ... 600
Input impedance – Eingangs-Impedanz h
ie
1.6 ... 15 kS
Output admittance – Ausgangs-Leitwert h
oe
18 ... 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 ... 3 *10
-4