LESHAN RADIO COMPANY, LTD.
K5–1/5
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
CEO
–65 –45 –30 V
Collector–Base Voltage V
CBO
–80 –50 –30 V
Emitter–Base Voltage V
EBO
–5.0 –5.0 –5.0 V
Collector Current — Continuous I
C
–100 –100 –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
150 mW
T
A
= 25°C
Thermal Resistance, Junction to Ambient R
θJA
833 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC856 Series – 65 — —
(I
C
= –10 mA) BC857 Series V
(BR)CEO
– 45 — — v
BC858 Series – 30 — —
Collector–Emitter Breakdown Voltage BC856 Series – 80 — —
(I
C
= –10 µA, V
EB
= 0) BC857 Series V
(BR)CES
– 50 — — v
BC858 Series – 30 — —
Collector–Base Breakdown Voltage BC856 Series – 80 — —
(I
C
= – 10 µA) BC857 Series V
(BR)CBO
– 50 — — v
BC858 Series – 30 — —
Emitter–Base Breakdown Voltage BC856 Series – 5.0 — —
(I
E
= – 1.0 µA) BC857 Series, V
(BR)EBO
– 5.0 — — v
BC858 Series – 5.0 — —
Collector Cutoff Current (V
CB
= – 30 V)
I
CBO
— — – 15 nA
(V
CB
= – 30 V, T
A
= 150°C) — — – 4.0 µA
1.FR–5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
3
2
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 419–02, STYLE 3
SOT– 323 / SC-70